Congratulations to second year XM² postgraduate researcher Konstantinos-Andreas Anastasiou, whose article Laser-writable high-k dielectric for van der Waals nanoelectronics has been published in Science Advances. State of the art van der Waals heterostructures rely on the use of hexagonal boron nitride as a gate dielectric, a tunnel barrier or a high-quality substrate material. The material […]